Inductively coupled plasma nanoetching of atomic layer deposition alumina
نویسندگان
چکیده
منابع مشابه
Introduction to (plasma-enhanced) atomic layer deposition
Film growth by the atomic layer deposition (ALD) method relies on alternate pulsing of the precursor gases and vapors into a vacuum chamber and their subsequent chemisorption on the substrate surface (Fig. 1) [1,2]. The different steps in the process are saturative such that ALD film growth is self-limiting yielding one submonolayer of film per deposition cycle. ALD has some unique characterist...
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Dispersive liquid–liquid microextraction (DLLME) combined with inductively coupled plasma-atomic emission spectrometry (ICP-AES) was applied for the determination of lead in different environmental water samples. Ammonium pyrrolidine dithiocarbamate (APDC), chloroform and ethanol were used as chelating agent, extraction solvent and disperser solvent, respectively. The effective parameters, such...
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Radiofrequency (rf) plasmas exhibit field penetration well beyond the classical skin depth. Two physical explanations are proposed. First, by tracing orbits of electrons through many rf cycles in a cylindrical system, it is shown that numerous ionizing electrons can reach the interior. Second, current-carrying electrons can form a long-lived torus that drifts toward the axis, causing frequently...
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ژورنال
عنوان ژورنال: Microelectronic Engineering
سال: 2018
ISSN: 0167-9317
DOI: 10.1016/j.mee.2018.02.023